Hence, devices face an ambipolar behaviour, i.e. Īt advanced technology nodes, an increasingly larger number of devices are affected by Schottky contacts at the source and drain interfaces. current ratio of the conducting over non-conducting device). As a measurable result, the transistor gives a higher I on/ I off ratio (i.e. This structure yields an excellent electrostatic control of the transistor channel, consisting of the nanowire itself under the gate. Transistors are formed by surrounding a segment of the wire by an insulator (such as SiO 2 or HfO 2) and then by a coaxial conducting material (gate), thus forming a so-called gate-all-around (GAA) transistor. Within the quest of future technologies, we describe here vertically stacked silicon nanowire field effect transistors (SiNWFETs) as a promising extension to the FinFETs.Īn SiNW is a thin wire of silicon material, with a diameter ranging from some nanometres to some tenths of nanometres. The latter (also called TriGate technology) is a major departure from planar semiconductor manufacturing: better transistor charge control is achieved at the price of a more complex three-dimensional fabrication process. Nevertheless, current semiconductor technologies have succeeded mainly along two avenues: fully depleted silicon on insulator and FinFET technologies. The downscaling of the physical features of field-effect transistors (FETs) has successfully produced better and cheaper devices. The interest in exploring new technological approaches to very-large-scale system-on-chip (SoC) design stems from the physical limitations and the costs of current manufacturing technologies and from the desire to use more efficient devices, still within the realm of silicon manufacturing. In particular, this work considers silicon nanowire (SiNW) technology as a possible replacement/enhancement of current device technologies and design issues for integrated nanowire systems. Extreme miniaturization has multiple positive effects, including better electronic properties (e.g. Nanosystems are integrated systems exploiting nano- electronic devices.
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